Time-resolved luminescence studies of heavily nitrogen doped ZnSe
نویسندگان
چکیده
Time-resolved luminescence data from heavily nitrogen doped ZnSe ~total N concentration exceeding mid-10/cm) is presented. The luminescence exhibited a decay time and a rise time which increased with decreasing energy of observation. Furthermore, both the decay times and rise times decreased with increasing temperature. These observations are consistent with the following model: ~i! a band of states is created due to fluctuations in the ionized impurity concentrations; ~ii! a portion of the carriers captured by the shallower impurity states are transferred to deeper states prior to recombination. © 1996 American Institute of Physics. @S0003-6951~96!00637-7#
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